dated :30/03/2004 semtech electronics ltd. ( subsidiary of sino-tech internatio nal holdings limited, a company listed on the hong kong stock exchange, stock code: 724 ) ? st 2sc5345 npn silicon epitaxial planar transistor rf amplifier applications. the transistor is subdivided into three groups, r, o and y. according to its dc current gain. on special request, thes e transistors can be manufactured in different pin configurations. to-92 plastic package weight approx. 0.19g absolute maximum ratings (t a = 25 ) symbol value unit collector base voltage v cbo 30 v collector emitter voltage v ceo 20 v emitter base voltage v ebo 4 v collector current i c 20 ma collector dissipation p tot 500 mw junction temperature t j 150 o c storage temperature range t s -55 to +150 o c
dated :30/03/2004 semtech electronics ltd. ( subsidiary of sino-tech internatio nal holdings limited, a company listed on the hong kong stock exchange, stock code: 724 ) ? st 2sc5345 characteristics at t amb =25 o c symbol min. typ. max. unit dc current gain at v ce =6v, i c =1ma r o y h fe h fe h fe 40 70 120 - - - 80 140 240 - - - collector base breakdown voltage at i c =10 a v cbo 30 - - v collector emitter breakdown voltage at i c =5ma v ceo 20 - - v emitter base breakdown voltage at i e =10 a v ebo 4 - - v collector cutoff current at v cb =30v i cbo - - 0.5 a emitter cutoff current at v eb =4v i ebo - - 0.5 a collector emitter saturation voltage at i c =10ma, i b =1ma v ce(sat) - - 0.3 v transition frequency at v ce =6v, i e =-1ma f t - 550 - mhz collector output capacitance at v cb =6v, f=1mhz c ob - 1.4 - pf
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